Fabrication of CeBiIG Epitaxial Films



Table of Content

CHAPTER 3: FABRICATION OF CEBIIG EPITAXIAL FILMS1

CHAPTER INTRODUCTION1

3.0DEPOSITION TECHNIQUES:1

3.1PHYSICAL VAPOR DEPOSITION (PVD)1

1.1.1VACUUM DEPOSITION2

1.1.2SPUTTERING2

3.2CHEMICAL VAPOUR DEPOSITION (CVD)4

3.3MOLECULAR BEAM EPITAXY:5

3.4LIQUID PHASE EPITAXY (LPE)6

3.5PULSED LASER DEPOSITION (PLD)7

3.6EPITAXY & GROWTH MODES10

a)Volmer -Weber (islands-Growth):10

b)Frank-Vander Merwe (Layer by Layer) mechanism:11

c)Stranski-Krastanov (Layer+island) -Mixed Growth:12

3.7EPITAXIAL GROWTH OF CERIUM AND BISMUTH CO-MODIFIED IRON GARNET FILMS13

REFERENCES:18

CHAPTER 3: FABRICATION OF CEBIIG EPITAXIAL FILMS

CHAPTER INTRODUCTION

In this section the film development and the methods of diverse deposition methods cited in short along with PLD (Pulsed laser deposition) utilised for the work recounted here. Dependencies of film development on diverse deposition parameters, significant facets of epitaxial development modes as well as fabrication of epitaxial CeBiIG thin films are succinctly discussed.

DEPOSITION TECHNIQUES:

PHYSICAL VAPOR DEPOSITION (PVD)

Thin film deposition methods are broadly utilised for fabricating innovative semiconductor, electrical devices and optical devices. Many methods are directed for slim film growth; most of them are mostly incompatible with the development of oxide and multicomplex oxides, especially for garnet materials. For demonstration Physical vapour deposition (PVD) is an atomistic deposition method in which the condensable vapour is got by heating scheme the material from a solid or fluid source in the pattern of atoms or substances [1]. The vaporization method is easily accomplished by either a warm filament source or an evaporation crucible. These are often called “thermal sources”.

The period thermal-source wrappings a broad kind of apparatus that are vitally open heaters, without radiative or insulating protecting or any entails of decreasing thermal gradients. These causes are steel narrow pieces or formed filaments that are warmed exactly by adhering the finishes to a reduced voltage, high present provide [1]. Typically, PVD methods are utilised to deposit films with thicknesses in the variety of a couple of nanometres to thousands of nanometres, deposition rates of 1-10 nm can be accomplished in this method [1]. The proportions of the substrates can be utilised from little to large generally 10 x 12 inches. This method farther can be engaged to deposit films of components and alloys. The major classifications of PVD processing are vacuum evaporation, sputter deposition and ion plating [1] and some of the procedures are recounted in the following.

VACUUM DEPOSITION

In Vacuum deposition, the material from a thermal vaporization source comes to the substrate by collision of gas substances [1]. The vacuum natural environment in the scheme decreases the contamination to low-level and usual stresses will be come to 10-5 Torr to 10-9 Torr. Usually high thermal vaporization rates can be accomplished in vacuum deposition.  Thermal evaporation is usually presented utilising tungsten cable coils by high-energy electron beam heating scheme of the source material and utilising this method kind of components can be encased [1].

SPUTTERING

Sputtering is (PVD technique) utilised to deposit slim films of a material on the exterior of a substrate. Typically with Ar gas and the blaze release is sustained under the submission of dc voltage between the electrodes. The Ar+ ions made in the blaze release (current flow) are accelerated at the cathode and sputter the goal producing in ...